Curriculum Vitae

1. Name: Yong Kim click!  "google scholar"

2. Birth Place/Nationality : Seoul, South Korea/ South Korea

3. Address :
Dept. of Physics, Dong-A University, Hadan-2-dong, 840, Sahagu,
Busan 604-714, South Korea
(E-mail address: yongkim@dau.ac.kr )
(home page: nsl.donga.ac.kr)
(Phone: 82-51-200-7276, Fax: 82-51-200-7232)
4. Educational Background:
1979-1982 Dept. of Physics, Seoul National University, BS
1983-1985 Dept. of Physics, Korea Advanced Institute of Science and Technology, MS
1987-1991 Dept. of Physics, Korea Advanced Institute of Science and Technology, Ph. D
5. Job Career:
1983-1990  Researcher, Semiconductor Materials Research Laboratory, Korea Institute of
Science and Technology
1991-1999  Senior Researcher, Semiconductor Materials Research Laboratory, Korea
Institute of Science and Technology
1995-1996  Australian Research Council International Fellow , Dept. of Electronic Materials, Engineering, Research School of Physical Science and Engineering, Australian National University
1999-2004  Assistant Professor, Dept. of Physics, Dong-A University
2004-2008  Associate Professor, Dept. of Physics, Dong-A University
2008-present Professor, Dept. of Physics, Dong-A University
2005-2006  Academic Staff, Dept. Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University
6. Awards:
1) Young Scientist Award, Korea Physical Society (1991)
2) Best Paper Award, Korea Physical Society (1992)
3) Suk-dang Academic Achievement Award, Dong-A University (2007)

7. Publications:

Referred scientific publications in English (151 publications)

  1. S. B. Choi, M. S. Song and Yong Kim, "Zn3P2 twinning superlattice nanowires grown on fluorine-doped tin oxide glass substrate.", J. Phys. Chem. C 123, 4597 (2019).
  2. S. B. Choi, M. S. Song and Yong Kim, "Growth of wurtzite CdTe nanowires on fluorine-doped tin oxide glass substrates and room-temperature bandgap parameter determination", Nanotechnology 29, 145702 (2018).
  3. M. S. Song, S. B. Choi, and Yong Kim, "Wurtzite ZnTe nanotrees and nanowires on fluorine-doped tin oxide glass substrates", Nano Lett. 17, 4365 (2017).
  4. S. B. Choi, M. S. Song, and Yong Kim, " O-doping profile along ZnTe nanowires obtained using power-dependent microphotoluminescence measurements", J. Phys. Chem. C120, 24457 (2016).
  5. M. S. Song and Yong Kim, " Growth of hierarchical CdS nanostructures on fluorine-doped tin oxide glass substrate", J. Phys. Chem. C 119, 28199 (2015).
  6. L. Hu, J. Yan, Yong Kim, G. Fei, K. Watanabe, T. Sekiguchi, L. Zhang, and X. Fang, “Cathodoluminescence and photoconductive characteristics of single-crystal ternary CdS/CdSe/CdS biaxial nanobelts”, Small 11, 1531 (2015).
  7. M. S. Song and Yong Kim, “Fletching-shaped Bi4Te3-ZnTe heterostructure nanowires”, Nanotechnology 25, 505605 (2014).
  8. M. S. Song and Yong Kim, “ Growth of bimodal Sn-catalyzed CdS nanowires by using tin sulfide”, J. Phys. Chem. C 118, 5988 (2014).
  9. Y-N. Guo, H-Y. Xu, G. J. Auchterlonie, T. Burgess, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, H-B. Shu, X-S. Chen, W. Lu, Yong Kim, and J. Zou, “ Phase separation induced by Au catalysts in ternary InGaAs nanowires”, Nano Lett. 13, 643 (2013).
  10. M. Kim, M. G. Kim, S. R. Kim, H. Y. Chung, J. G. Choi, H. M. Joh, T. H. Chung, H. S. Kim, and Yong Kim, “Effective surface modification of a germanium layer by using an atmospheric pressure plasma jet with a round ended nozzle”, J. Kor. Phys. Soc. 63, 996 (2013).
  11. J. H. Kang, Q. Gao, P. Parkinson, H. J. Joyce, H. H. Tan, Yong Kim, Y. Guo, H. Xu, J. Zou, and C. Jagadish, “Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates”, Nanotechnology 23, 415702 (2012).
  12. So Ra Moon, Jung Hyuk Kim, and Yong Kim, “ZnTe nanowires with oxygen intermediate band grown by bismuth-catalyzed physical vapor transport”, J. Phy. Chem C 116, 10368 (2012).
  13. Jung Hyuk Kim, So Ra Moon, Yong Kim, Z. G. Chen, J. Zou, D. Y. Choi, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, “Taper-free and kinked Ge nanowires grown on silicon via purging and the two temperature process”, Nanotechnology 23, 115603 (2012).
  14. Jung Hyuk Kim, So Ra Moon, Hyun Sik Yoon, Jae Hun Jung, Yong Kim, Z. G. Chen, J. Zou, D. Y. Choi, H. J. Joyce, Q. Gao, H. H. Tan and C. Jagadish, “Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process”, Cryst. Growth Des. 12, 135 (2012).
  15. H. J. Joyce, Q. Gao, J. Wong-Leung, Yong Kim, H. H. Tan and C. Jagadish, “ Tailoring GaAs, InAs, InGaAs nanowires for optoelectronic device applications”, IEEE J. Select. Topics Quant. Elec. 17, 766 (2011).
  16. H. J. Joyce, Q. Gao, H.H. Tan, C.Jagadish, Yong Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications”, Progress in Quantum Electronics 35, 23 (2011).
  17. Jung-Hyun Kang, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, Yong Kim, Y. Guo, H. Xu, J. Zou, M. A. Fickenscher, L. M. Smith, H. E. Jackson and J. M. Yarrison-Rice. “Defect-free GaAs/AlGaAs core-shell nanowires on Si substrates”, Cryst. Growth Des. 11, 3109 (2011).
  18. S. Paiman, Q. Gao, H. J. Joyce, Y. Kim, H. H. Tan, C. Jagadish, X. Zhang, Y. Guo, and J. Zou, “Growth temperature and V/III ration effects on the morphology and crystal structure of InP nanowires”, J. Phys. D: Appl. Phys. 43, 445402 (2010).
  19. Jae Hun Jung, Hyun Sik Yoon, Yu Lee Kim, Man Sunk Song, Yong Kim, Zhi Gang Chen, Jin Zou, Duk Yong Choi, Jung Hyun Kang, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, and Chennupati Jagadish, “Vertically oriented germanium nanowires on silicon substrates using thin germanium buffer layer”, Nanotechnology 21, 295602 (2010).
  20. Yu Lee Kim, Jae Hun Jung, Hyun Sik Yoon, Man Suk Song, Se Hwan Bae, YongKim, Zhi Gang Chen, Jin Zou, Hannah J. Joyce, QiangGao, Hark Hoe Tan  and Chennupati Jagadish, “ CdS/CdSe lateral heterostructures nanobelts by a two-step physical vapor transport method”, Nanotechnology 21, 145602 (2010).
  21. C. J. Chung, T. H. Chung, Y. M. Shin and Yong Kim, “Characteristics of nitrogen-Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N2/NH3”, Curr. Appl. Phys. 10, 428 (2010).
  22. J. H. Kang, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, Yong Kim, D. Y. Choi, Y. Guo, H. Xu, J. Zou, M. A. Fickenscher, L. M. Smith, H. E. Jackson, and J. M. Yarrison-Rice, “ Novel growth and properties of GaAs nanowires on Si substrates”, Nanotechnology 21, 035604 (2010).
  23. Q. Gao, H. J. Joyce, S. Paiman, J. H. Kang, H. H. Tan, Yong Kim, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, X. Zhang, J. Zou and C. Jagadish, “Nanowires for optoelectronic device application”, Phys. Status Solidi C6, 2678 (2009).
  24. M. Paladugu, J. Zou, Y. N. Guo, X. Zhang, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, “Evolution of wurtzite structured GaAs shells around InAs nanowire cores”, Nanoscale Res. Lett 4, 846 (2009).
  25. T. H. Chung, M. S. Kang, C. J. Chung, and Yong Kim, “Effects of process parameters on the properties of silicon oxide films using plasma enhanced chemical vapor deposition with tetramethoxysilane”, Curr Appl. Phys. 9, 598 (2009).
  26. M. Paladugu, J. Zou, Y. N. Guo, X. Zhang, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, and Yong Kim, “Crystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures”, J. Appl. Phys. 105, 073503(2009).
  27. Yu Lee Kim Jae Hun Jung, Kyung Ho Kim, Hyun Sik Yoon, Man Suk Song, Se Hwan Bae, and Yong Kim, “The growth and optical properties of CdSSe nanosheets”, Nanotechnology 20, 095605 (2009).
  28. H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, M. A. Fickenscher, S. Perera, T. B. Hoang, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, X. Zhang, and J. Zou, “Unexpected Benefits of Rapid Growth Rate for III-V Nanowires”, Nano Lett. 9 (2009).
  29. X. Zhang, J. Zou, M. Paladugu, Y. Guo, Y. Wang, Yong Kim, H. J. Joyce, Q. Gao, H. H. Tan and C. Jagadish, “Evolution of epitaxial InAs nanowires on GaAs (111)B”, Small 5, 366 (2009).
  30. M. Paladugu, J. Zou, Y. N. Guo, X. Zhang, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, and Yong Kim,” Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures”, Angew. Chem. Int. Ed. 28, 780 (2009).
  31. H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, M. A. Fickenscher, S. Perera, T. B. Hoang, L. M Smith, H. E. Jackson, J. Yarrison-Rice, X. Zhang, and J. Zou, “High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization”, Adv. Funct. Mater. 18, 3794 (2008).
  32. M.  Paladugu,  J. Zou, Y. N. Guo, X. Zhang, H. J.  Joyce, Q.  Gao, H. H. Tan, and C. Jagadish, Yong Kim, “Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures”, Appl. Phys. Lett. 93, 201908 (2008).
  33. M. Paladugu, J. Zou, Y-N. Guo, X. Zhang, Yong Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, “Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures”, Appl. Phys. Lett. 93, 101911 (2008).
  34. M. S. Song, J. H. Jung, Yong Kim, J. Zou, H.J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, “Vertically standing Ge nanowires on GaAs(110) substrates”, Nanotechnology 19, 125602 (2008).
  35. A. Mishra, L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Yong Kim, H. J. Joyce, Q. Gao, H. H. Tan, and C. Jagadish, “ Polarization and temperature dependence of photoluminescence from zincblende and wurtize InP nanowires”, Appl. Phys. Lett. 91, 263104 (2007).
  36. L.V. Titova, T.B. Hoang, J.M. Yarrison-Rice, Yong Kim, H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, X Zhang, J. Zou, L.M. Smith,” Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires”, Nano Lett. 7, 3383 (2007).
  37. M. Paladugu, J. Zou, Y. Guo, G. J. Auchterlonie, H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, “Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures”, Small 3 1873 (2007).
  38. M. Paladugu, J. Zou, G.J. Auchterlonie, Y.N. Guo, H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, “Evolution of InAs branches in InAs/GaAs nanowire heterostructures”, Appl. Phys. Lett. 91, 133115 (2007).
  39. Yong Kim, Man Suk Song, Young Dae Kim, Jae Hun Jung, Q. Gao, H. H. Tan, and C. Jagadish, “Epitaxial germanium nanowires on GaAs grown by chemical vapor deposition”,  J. Kor. Phys. Soc. 51, 120 (2007).
  40. H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, X. Zhang, Y. Guo, J. Zou, “Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process”, Nano Lett. 7, 921 (2007).
  41. T. B. Hoang, L. V. Titova, J. M. Yarrison-Rice, A. O. Govorov, Yong Kim, H.J. Joyce, H. H. Tan, C. Jagadish, L. M. Smith, ”Resonant Excitation and Imaging of Nonequilibrium Exciton Spins in Single Core-Shell GaAs-AlGaAs Nanowires”, Nano Lett. 7, 588 (2007).
  42. J. Zou, M. Paladugu, Y.N. Guo, Yong Kim, Q. Gao, H.J. Joyce, H. H. Tan, C. Jagadish, “ Growth Mechanism of Truncated Triangular III-V Nanowires”, Small 3, 389 (2007).
  43. H. H. Tan, K. Sears, S. Mokkapati, L. Fu, Yong Kim, P. McGowan, M. Buda, and C. Jagadish, “Quantum dots and nanowires grown by metal-organic chemical vapour deposition for optoelectronic device applications”, IEEE J. Sel. Topics in Quantum Electronics 12, 1242 (2006).
  44. L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Yong Kim, H. J. Joyce, H. H. Tan, and C. Jagadish, “ Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires”, Appl. Phys. Lett. 89, 173126 (2006).
  45. Yong Kim, Q. Gao, H. J. Joyce, H. H. Tan, C. Jagadish, M. Paladugu, and J. Zou, “III-V nanowires for optoelectronics”, Proc. of SPIE 6352, 635226 (2006).
  46. C. J. Chung, T. H. Chung, M. S. Kang, and Yong Kim, “Electrical and optical properties of nitrogen-incorporated silicon-oxide films by using plasma-enhanced chemical-vapor deposition with tetermethoxysilane/N2O/NH3 gas”, J. Kor. Phys. Soc. 49, 162(2006).
  47. M. S. Kang, T. H. Chung, and Yong Kim, “ Plasma enhanced chemical vapour deposition of nitrogen-incorporated silicon oxide films using TMOS/N2O gas”, Thin Solid Films 506, 45 (2006).
  48. Yong Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, M. Paladugu, J. Zou, and A. A. Suvorova, “ Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires”, Nano Lett. 6, 599 (2006).
  49. Kyu Man Cha, Young Dae Kim, Jun Hyun Kang, Jae-Yel Yi, Hong Jun Bark, Tae Hun Chung, Yong Kim, “Time Resolved Photoluminescence Study on Silicon Nitride/Silicon-Rich-Oxide Superlattices Grown by Using Ion-Beam Sputtering Deposition”, J. Kor. Phys. Soc. 48, 297 (2006).
  50. Jae Kwon Kim, Kyu Man Cha, Jung Hyun Kang, Yong Kim, Jae-Yel Yi, Tae Hun Chung, and Hong Jun Bark, “ The influence of secondary ion beam irradiation on the formation of Si nanocrystals during dual ion beam sputtering”, Thin Solid Films 478, 116 (2005).
  51. Hea Jung Cheong, Jung Hyun Kang, Jae Kwon Kim, and Yong Kim, “ Growth of highly luminescent silicon nanocrystals by rapid thermal chemical vapour deposition”, Key Eng. Mater. 277, 977 (2005).
  52. Jae Kwon Kim, Kyu Man Cha, Jung Hyun Kang, Yong Kim, Jae-Yel Yi, Tae Hun Chung, and Hong Jun Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition”, Appl. Phys. Lett. 85, 1595 (2004).
  53. Sang Bong Bang, Tae Hun Chung, Yong Kim, Myung Suk Kang, and Jae Kwon Kim, “ Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2 gas”, J. Phys. D: Appl. Phys. 37, 1679 (2004).
  54. Jung Hyun Kang, Young Dae Kim, Kyu Man Cha, Hea Jeong Cheong, Yong Kim, Jae-Yel Yi, Hong Jun Bark, and Tae Hun Chung, "Electroluminescence properties of nanocrystal Si/SiO2 superlattice grown by rapid thermal chemical vapor deposition", J. Kor. Phys. Soc. 44, 1065  (2004).
  55. Jae Kwon Kim, Kyu Man Cha, Jung Hyun Kang, Young Dae Kim, Yong Kim, Hong Jun Bark, Jae-Yel Yi, and Tae Hun Chung, "Selective formation of Si nanocrystals by assist ion beam irradiation", J. Kor. Phys. Soc. 45, 728 (2004).
  56. Sang Bong Bang, Tae Hun Chung, and Yong Kim, "Plasma enhanced chemical vapor deposition of silicon oxide films using TMOS/O2 gas and plasma diagnostics", Thin Solid Films 444, 125 (2003).
  57. Hea Jeong Cheong, Jung Hyun Kang, Jae Kwon Kim, Yong Kim, Jae-Yel Yi, Tae Hun Chung, and Hong Jun Bark, " Formation of luminescent Si nanocrystals by high-temperature rapid thermal chemical vapor deposition", Appl. Phys. Lett.  83, 2922 (2003).
  58. Jae Kwon Kim, Hea Jeong Cheong, Yong Kim, Jae-Yel Yi, Hong Jun Bark, S. H. Bang, and J. H. Cho, " Rapid-thermal-annealing effect on lateral charge loss in metal-oxide-semiconductor capacitors with Ge nanocrystals", Appl. Phys. Lett. 82, 2527 (2003).
  59. Jae Kwon Kim, Hea Jeong Cheong, Kyung Hwa Park, Yong Kim, Jae-Yel Yi and Hong Jun Bark, "Rapid thermal annealing effect on charge storage characteristics in MOS capacitor with Ge nanocrystals", J. Kor. Phys. Soc. 42, S316 (2003).
  60. S. H. Bang, J. Y. Son, J. H. Cho, Jae Kwon Kim, Hea Jeong Cheong, and Yong Kim, "Scanning probe microscope studies of Ge nanocrystals grown on SiO2/Si", J. Kor. Phys. Soc. 42, s698 (2003).
  61. Yong Kim, Hea Jeong Cheong, Kyung Hwa Park, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi, S. H. Bang, and J. H. Cho, "Charge retention characteristics in a metal-insulator-semiconductor capacitor containing Ge nanocrystals", Semicond. Sci. & Techol. 17, 1039 (2002).
  62. Kyung Hwa Park, Yong Kim, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi, Won Chel Choi, and Eun Kyu Kim, “Electrical and structural properties of Si nanocrystals prepared by ion-beam-assisted electron beam deposition”, J. Kor. Phys. Soc. 39, 283 (2001).
  63. M. H. Son, B. H. Choi, S. W. Hwang, D. Ahn, C. K. Hyon, E. K. Kim, Yong Kim, and J. S. Lim, " Patterned formation of InAs QDs for single-electron device applications", J. Kor. Phys. Soc. 39, 433 (2001).
  64. Yong Kim, Kyung Hwa Park, Won Chel Choi, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi, and Jaein Jeong, "Charge retention effect in metal-oxide-semiconductor structure containing Si nanocrystals prepared by ion-beam-assisted electron beam deposition", Mater. Sci. Eng. B83, 145 (2001).
  65. Yong Kim, Kyung Hwa Park, Tae Hun Chung, Hong Jun Bark, Jae-Yel Yi, Won Chel Choi, Eun Kyu Kim, Ju Wook Lee, Jeong Yong Lee, "Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition", Appl. Phys. Lett. 78, 934 (2001).
  66. Min Cheol Kweon, Seong-Hyun Lee, Eun-Mi Kim, Yong Kim, Jae-Yel Yi, Hong Jun Bark, Byung Koo Choi, Dong-Hyuk Shin, "Incorporation of nitrogen in diamond by using a modulated growth technique", J. Mater. Sci. Lett. 20, 469 (2001).
  67. Sung Min Hwang, Ju Young Lee, Se-Ki Park, Chan Kyeong Hyon, Yong Kim, Young Ju Park, Eun Kyu Kim, In-Hoon Choi, " Evaluations of strains in fused layers using patterned substrates", Mater. Sci. Eng. B77, 83 (2000).
  68. M. H. Son, S. K. Jung, B. D. Min, C. K. Hyon, B. H. Choi, E. K. Kim, Yong Kim, J. S. Lim, "Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate", Mat. Res. Soc. Symp. Proc. 571, 171 (2000).
  69. S. K. Jung, S. W. Hwang, D. Ahn, J. H. Park, Yong Kim and E. K. Kim, "Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot", Physica E7, 430 (2000)
  70. Won Chel Choi, Ho Nyung Lee, Yong Kim, Hyun Min Park, and Eun Kyu Kim, "  Luminescence from the thermally treated cerium oxide on silicon", Jpn. J. Appl. Phys. 38, 6392 (1999).
  71. C. K. Hyun, S. C.  Choi, S. W. Hwang, D. Ahn, Yong Kim, and E. K. Kim, "Nano-structure fabrication and manipulation by the cantilever oscillation of an atomic force microscope", Jpn. J. Appl. Phys. 38, 7257 (1999).
  72. S. K. Jung, S. -H. Song, S. W. Hwang, J. H. Park, Yong Kim and E. K. Kim, "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots" , Physica B 272, 18(1999). 
  73. B. H. Choi, S. W. Hwang, I. G. Kim, H. C. Shin, Yong Kim and E. K. Kim, "A Silicon self assembled quantum dot transistor operating at room temperature", Microelectronic Engineering 47, Issues 1-4, 115 (1999).
  74. Maeng Ho Son, S.K. Jung, Byung Don Min, Chan Kyeong Hyun, Bum Ho Choi, Eun Kyu Kim, Yong Kim, and Jong Soo Lim, "Stress-driven formation of InGaAs quantum dots on GaAs with submicron platinum pattern", Jpn. J. Appl. Phys. 38, L1003 (1999).
  75. Won Cheol Choi, Ho Nyung Lee, Eun Kyu Kim, Yong Kim, Chong-Yun Park, Hong Seong Kim and Jeong Yong Lee, " Violet/blue light-emitting cerium silicates", Appl. Phys. Lett. 75, 2389 (1999).
  76. C. K. Hyon, S. C. Choi, S. W. Hwang, D. Ahn, Yong Kim, E. K. Kim " Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope", Appl. Phys. Lett. 75, 292 (1999).
  77. S. K. Jung, C. K. Hyon, J. H. Park, S. W. Hwang, D. Ahn, M. H. Son, B. D. Min, Yong Kim, and E. K. Kim, "Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots", Appl. Phys. Lett. 75, 1167 (1999).
  78. Hosun Lee, Euze Seong, Seong-Min Kim, Maeng-Ho Son, Byung-Don Min, Yong Kim, and Eun Kyu Kim, "Ellipsometric study of self-assembled InAs/GaAs quantum dots", Jpn. J. Appl. Phys. 38, L245 (1999)
  79. Yong Kim, Byung Don Min, and Eun Kyu Kim, "Ripening suppression and large photoluminescence blue-shift in aligned InGaAs quantum dots on a vicinal (100) GaAs substrate", J. Appl. Phys. 85, 2140 (1999).
  80. S. K. Jung, S. W. Hwang, B. H. Choi, S. I. Kim, J. H. Park, Yong Kim, E. K. Kim, and S-K. Min, "Direct electronic transport through an ensemble of InAs self-assembled quantum dots", Appl. Phys. Lett. 74, 714 (1999).
  81. W. C. Choi, H. N. Lee, Yong Kim, E. K. Kim, "The origin of luminescence from cerium oxide on silicon", Mat. Res. Sco. Symp. 560, 227 (1999).
  82. C. K. Hyon, S. C. Choi, S. W. Hwang, D. Ahn, Yong Kim, E. K. Kim, "Nano-sturucture patterning and manipulation using a tapping mode atomic force microsope", J. Kor. Phys. Soc. 35, s987 (1999).
  83. Hosun Lee, E. Z. Seong, S. M. Kim, M. H. Son, B. D. Min, Yong Kim, and E. K. Kim, " Optical study of InAs/GaAs quantum dots using spectroscopic ellipsometry", J. Kor. Phys. Soc. 34, s61 (1999).
  84. S. K. Jung, B. H. Choi, S. I. Kim, C. K. Hyun, S. W. Hwang J. H. Park, Yong Kim, E. K. Kim, and S-K. Min, "Direct transport measurement through an ensemble of InAs self-assembled quantum dots", Jpn. J. Appl. Phys. 37, 7169 (1998).
  85. B. H. Choi, S. K. Jung, S. I. Kim, S. W. Hwang, J. H. Park, Yong Kim, E. K. Kim, and S-K. Min, "Electrical properties of E-beam exposed silicon dioxides and their application to nano-devices", Jpn, J. Appl. Phys. 37, 6996 (1998).
  86. B. H. Choi, S.W. Hwang, I. G. Kim, H. C. Shin, Yong Kim, E. K. Kim, "Fabrication and room temperature characterization of a silicon self-assembled quantum dot transistor", Appl. Phys. Lett.,  73,  3129 (1998).
  87. C. Jagadish, H. H. Tan, S. Yuan, Yong Kim, and M. Gal, "Ion beam and anodic oxide induced intermixing of quantum well heterostructures for optoelectronic devices", Electrochemical society proc. vol. 98, 87 (1998).
  88. Chang-Sik Son, Young K Park, Seong-Il Kim, Yong Kim, Eun Kyu Kim, Suk-Ki Min, and In Hoon Choi, "Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition", Jpn. J. Appl. Phys. 37, 1701 (1998).
  89. Tae Geun Kim, Sung Min Hwang, Yong Kim, Eun Kyu Kim, and Suk-Ki Min, " Performance of GaAs/AlGaAs V-grooved inner stripe quantum well wire lasers with differenent current blocking configuration", IEEE J. Quantum Elect. Vol 34. No. 8, 1461 (1998).
  90. Shu Yuan, C. Jagadish, Yong Kim, Y. Chang, H. H. Tan, R. M. Cohen, M. Petravic, L. V. Dao, M. Gal, M. C. Y. Chan, E. H. Li, and P. S. Zory, " Anodic-oxide Induced Intermixing in GaAs/AlGaAs Quantum Well and Quantum Wire Structures", IEEE Selected topics in Quantum Elect. Vol. 4. No. 4, 629 (1998).
  91. Young K Park, Chang-Sik Son, Seong-Il Kim, Yong Kim, Eun Kyu Kim, and Suk-Ki Min," Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs", J. Appl. Phy. 83, 2519 (1998).
  92. Byung Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min, and Mann Jang Park, "Suppression of Ostwald ripening in InGaAs quantum dots on vicinal (100) substrate", Phys. Rev. B 57, 11 879 (1998).
  93. Shu Yuan, Yong Kim, H. H. Tan, C. Jagadish, P. T. Burke, L. V. Dao, M. Gal, M. C. Y. Chan, E. H. Li, J. Zou, D. Q. Cai, D. J. H. Cockayne, and R. M. Cohen, anodic-oxide-induced intermixing in GaAs/AlGaAs quantum wells", J. Appl. Phys. 83, 1305 (1998).
  94. Byung Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min, and Mann Jang Park, " The formation and optical properties of InGaAs quantum dots on exact and 2°off (100) GaAs substrates ", J. Kor. Phy. Soc., 33, s291 (1998).
  95. Young K Park, Seong-Il Kim, Yong Kim, Eun Kyu Kim, Suk-Ki Min, Chang-Sik Son and In-Hoon Choi, "Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deoposition", J. Kor. Phys. Soc. 32, 704 (1998).
  96. Chang-Sik Son, Seong-Il Kim, Yong Kim, Eun Kyu Kim, Suk-Ki Min, and In-Hoon Choi, " Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atomospheric pressure metalorganic chemical vapor deposition", Microelec. J. 28, 1051 (1997).
  97. Chang-Sik Son, Seong-Il Kim, Yong Kim, Young K. Park, Eun Kyu Kim, Suk-Ki Min, and In-Hoon Choi, " Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemcal vapor deposition using CBr4", J. Appl. Phys. 82, 1205 (1997).
  98. R. Leon, T. J. Senden, Yong Kim, C. Jagadish, A. Clark, "Nucleation transitions for InGaAs islands on vicinal (100) surfaces", Phys. Rev. Lett. 78, 4942 (1997).
  99. Shu Yuan, Yong Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, R. M. Cohen, "Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing", Appl. Phys. Lett. 70. 1269 (1997).
  100. Seong-il Kim, Moo-Sung Kim, Yong Kim, Seong-Min Hwang, Byung-Don Min, ChangSik Son, Eun Kyu Kim, and Suk-Ki Min, "Lateral growth rate control of GaAs on patterned substrates by CCl4, CBr4 during MOCVD", J. Cryst. Growth 170, 665 (1997).
  101. Young K. Park, Seong-il Kim, Yong Kim, Eun Kyu Kim and Suk-Ki Min, "Anharmonic Decay of Phonons in Silicon from Third-Order Density-Functional Perturbation Theory", J . Kor. Phys. Soc. 31, 764 (1997).
  102. Chang-Sik Son, Seong-Il Kim, Tae-Geun Kim, Yong Kim, Shinho Cho, Young Kyun Park, Eun Kyu Kim, and Suk-Ki Min, "Electrical Properties of Rapid Thermal Annealed Carbon-Doped InGaAs Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition",  J. Kor. Phys. Soc. 30, 244 (1997).
  103. Chang-Sik Son, Seong-Il Kim, Byung-Don Min, Yong Kim, Eun Kyu Kim, Suk-Ki Min, In-Hoon Choi, "Electrical properties of heavily carbon-doped GaAs epilayers grown by atomospheric pressure metalorganic chemical vapor deposition", Jpn. J. Appl. Phys. 35, 6562 (1996).
  104. Yong Kim, Shu Yuan, R. Leon, C. Jagadish, M. Gal, M. B. Johnston, M. R. Phillips, M. A. Stevens Kalceff, J. Zou, and D. J. H. Cockayne, " Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate", J. Appl. Phys. 80, 5014 (1996).
  105. R. Leon, Yong Kim, C. Jagadish, M. Gal, J. Zou and D. Cockayne, "Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots", Appl. Phys. Lett. 69, 1888 (1996).
  106. Seong-Il Kim, Moo-Sung Kim, Yong Kim, Chang Sik Son, Seong-Min Hwang, Byung-Don Min, Eun Kyu Kim, and Suk-Ki Min, "Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates", Appl. Phys. Lett. 69, 815 (1996 ).
  107. Chang-Sik Son, Seong-Il Kim, Yong Kim, Min-Suk Lee, Moo-Sung Kim, Suk-Ki Min, In-Hoon Choi, "Properties  of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4", J. Cryt. Growth 165, 222 (1996).
  108. Tae-Geun Kim, Jung-Ho Park, Yong Kim, Seong-Il Kim, Chang-Sik Son, Moo-Sung Kim, Eun-Kyu Kim and Suk-Ki Min, " Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array", Semicond. Sci. & Technol. 11, 1214 (1996).
  109. Chang-Sik Son, Seong-Il Kim, Tae-Geun Kim, Yong Kim, Moo-Sung Kim, and Suk-Ki Min, "Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs", Solid State Commun. 98, 475 (1996).
  110. H. H. Tan, Yong Kim, and C. Jagadish," Ion implantation for wavelenght-shifting and quantum wire lasers", Optoelectronic and Microelectronic Materials and Device Proceedings, 1996 Conference on, 114 (1996).
  111. P. T. Burke, M. Gal, S. Yuan, Yong Kim, and C. Jagadish, "Photoluminescence studies of anodic-oxide-induced intermixing of GaAs/AlGaAs quantum well heterostructures", Optoelectronic and Microelectronic Materials and Device Proceedings, 1996 Conference on, 122 (1996).
  112. Yong Kim, S. Yuan, R. Leon, A. Clark, C. Jagadish, M. B. Johnston, P. Burke, M. Gal, J. Zou, D. Cockayne, M. R. Phillips, and M. A. Stevens Kalceff, " V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing", Optoelectronic and Microelectronic Materials and Device Proceedings, 1996 Conference on, 200 (1996).
  113. Moo-Sung Kim, Yong Kim, Seong-Il Kim, Seong-Min Hwang, Joon-Mo Kang, Yang-Keun Park, and Suk-Ki Min, "Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4", Mat. Sci. Eng. B35, 214 (1995).
  114. K. H. Park, Y. T. Byun, Yong Kim, S. H. Kim, S. S. Choi, Y. Chung, " Dependence of propagation loss on etching depth in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As strip-loaded type waveguides", Optical and Quantum Electronics 27, 363 (1995).
  115. Seong-Il Kim, Chang-Sik Son, Min-Suk Lee, Yong Kim, Moo-Sung KIm, and Suk-Ki Min, " Temperature dependent electrical properties of heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition", Solid State Commun. 93, 939 (1995).
  116. Won-Jun Choi, Seok Lee, Jingming Zhang, Yong Kim, Sang Kuk Kim, Jung-Il Lee, Kwang Nham Kang, and Kyuman Cho, "Enhancement effect of plasma enhanced chemical vapor deposited SiN capping layer on dielectric cap quantum well disordering", Jpn. J. Appl. Phys. 34, L418 (1995).
  117. J. M. Kang, C. S. Son, Moo-Sung Kim, Yong Kim, Suk-Ki Min, and C. S. Kim, " Origin of crystallographic tilt in InGaAs/GaAs (001) heterostructure", Appl. Phys. Lett. 67, 641 (1995).
  118. Yong Kim, Yang Keun Park, Moo-Sung Kim, Joon-Mo Kang, Seong-Il Kim, Seong-Min Hwang, and Suk-Ki Min, " The fabrication of quantum wire structures through application of CCl4 towards lateral growth rate control of GaAs on patterned GaAs substrates", Appl. Phys. Lett. 67, 1871 (1995).
  119. Yong Kim, Yang Keun Park, Moo-Sung Kim, Joon-Mo Kang, Seong-Il Kim, Seong-Min Hwang, and Suk-Ki Min, "Facet evolution study on CCl4-doped Al0.5Ga0.5As/GaAs multilayer during metalorganic chemical vapor deposition on patterned GaAs substrates", J. Cryst. Growth 156, 169 (1995).
  120. W. J. Choi, S. Lee, Yong Kim, D. Woo, S. K. Kim, S. H. Kim, J. I. Lee, K, N. Kang, J. H. Chu, S. K. Yu, J. C. Seo, D. Kim, and K. Cho, " Carrier life times in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers", Appl. Phys. Lett. 67, 3438 (1995).
  121. Seong-Il Kim, Yong Kim, Seong-Min Hwang, Moo-Sung Kim, and Suk-Ki Min, " Lateral growth rate enhancement on patterned GaAs substrates with CCl4 by MOCVD", Inst. Phys. Conf. Ser. No 145: Chap. 2, 137 (1995).
  122. Moo-Sung Kim, Yong Kim, Min-Suk Lee, Young Ju Park, Seong-Il Kim, and Suk-Ki Min, "Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor deposition", J. Cryst. Growth 146, 482 (1995).
  123. T. W. Kim, Yong Kim, and S-K. Min, " Magnetotransport and electric subband studies of Si-delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapor deposition", Thin Solid Films 254, 61 (1995).
  124. Hee Jeen Kim, Jae Sung Kim, Yong Kim, Moo Sung Kim, and Suk-Ki Min, "Cross-sectional observation of NaClO stain-etched Al0.5Ga0.5As /GaAs multilayer by atomic force microscopy", J. Mater. Sci. 30, 678 (1995).
  125. Moo-Sung Kim, Yong Kim, Min-Suk Lee, Young Ju Park, Seong-Il Kim, and Suk-Ki Min, "The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates", J. Crystal Growth 139, 231 (1994).
  126. Seong-Il Kim, Yong Kim, Moo-Sung Kim, Chun Keun Kim, Suk-Ki Min, Choochon Lee, "Carbon doping characteristics of GaAs and Al0.3Ga0.7As grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4", J. Cryst. Growth 141, 324 (1994).
  127. T.W. Kim, K-H Yoo, K-S. Lee, Yong Kim, S-K. Min, S. S. Yom, S. J. Lee, " Magnetotransport and electron subband studies of edge delta-doped Al0.27Ga0.73As single quantum wells", J. Appl. Phys. 76, 2863 (1994).
  128. T. W. Kim, Yong Kim, J. Y. Lee, and S. J. Lee, "Structural, electrical and optical properties of Si delta-doped Al0.27Ga0.73As/GaAs single quantum wells grown by metalorganic chemical vapor deposition", Semicond. Sci. Technol. 9, 1823 (1994).
  129. W. J. Choi, J. I. Lee, I. K. Han, K. N. Kang, Yong Kim, H. L. Park, K. Cho, "Enhanced disordering of GaAs/AlGaAs multilpe quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposited SiN capping layer grown at high RF power condition", J. Mater. Sci. Lett. 13, 326 (1994).
  130. Seong-Il Kim, Kyung Sook Eom, Yong Kim, Moo-Sung Kim, and Suk-Ki Min, Choochon Lee, Myung Hyun Kwak and Dong Sung Ma, "Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness", J. Cryst. Growth 126, 441 (1993).
  131. Yong Kim, Moo-Sung Kim, and Suk-Ki Min, "Properties of center and edge  delta-doped GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition", Appl. Phys. Lett. 62, 741 (1993).
  132. Seong-il Kim, Moo-Sung Kim, Yong Kim, Kyung Sook Eom, and Suk-Ki Min , "Low temperature photoluminescence characteristics of carbon doped GaAs",  J. Appl. Phys. 73, 4703 (1993).
  133. Seong-Il Kim, Moo-Sung Kim, Yong Kim, Kyung Sook Eom, Suk-Ki Min, and Choochon Lee, "Electrical characteristics of carbon-doped GaAs", J. Mater. Sci. Lett. 12, 1251 (1993).
  134. Min-Suk Lee, Yong Kim, Moo-Sung Kim, Seong-Il Kim, Suk-Ki Min, Yong Duk Kim, and Sahn Nahm, " Properties of the quantum wires grown on V-grooved Al0.3Ga0.7As substrates by atmospheric pressure metalorganic chemical vapor deposition", Appl. Phys. Lett. 63, 3052 (1993).
  135. Seong-Il Kim, Yong Kim, Min-Suk Lee, Moo-Sung Kim, and Suk-Ki Min, and Choochon Lee, "Hall mobility and temperature dependent photoluminescence of carbon-doped GaAs", Solid State Commun. 88, 743 (1993).
  136. Yong Kim, Seong-il Kim, Moo-Sung Kim, Suk-Ki Min, Min Suk Lee, and Young Duk Kim, "Study on the lateral island extension for growth-interrupted GaAs/Al0.3Ga0.7As  single quantum wells grown by atmospheric-pressure metalorganic chemical vapor deposition", J. Kor. Phy. Soc. 26, 705 (1993).
  137. T. W. Kim, Yong Kim, Moo-Sung Kim, Eun Kyu Kim, and Suk-Ki Min, “Electronic subbands in Si-delta-doped GaAs grown by metalorganic chemical vapor deposition”, Solid State Commun. 84, 1133 (1992).
  138. Yong Kim, Moo-Sung Kim, Suk-Ki Min, and T. W. Kim, “Diffusion limiting mechanism in Si-delta-doped GaAs grown by metalorganic chemical vapor deposition”, Solid State Commun. 84, 453 (1992).
  139. T.W.Kim, Yong Kim, M.-S. Kim, and S-K. Min, " Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric pressure metalorganic chemical vapor deposition", J. Mater. Sci. Lett. 11, 994 (1992).
  140. Yong Kim, M.-S. Kim, S-K. Min, T.W.Kim, "Diffusion limiting mechanism in Si-delta-doped GaAs grown by metalorganic chemical vapor deposition", Solid State Commun. 84, 453 (1992).
  141. T.W.Kim, Yong Kim, M.S.Kim, E.K.Kim, and S-K. Min, "Electric subbands in Si-delta-doped GaAs grown by metalorganic chemical vapor deposition", Solid State Commun. 84, 1133 (1992).
  142. Yong Kim, Moo-Sung Kim, Suk-Ki Min, and Choochon Lee, "Dislocation-accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by metalorganic chemical vapor deposition", J. Appl. Phys. 69, 1355 (1991).
  143. Eun Kyu Kim, Hoon Young Cho, Yong Kim, Hyeon Soo Kim, Moo Sung Kim, and Suk-Ki Min, " Hydrogenation effect on electrical and optical properties of GaAs epilayers grown on Si substrates by metalorganic chemical vapor deposition", Appl. Phys. Lett. 58, 2405 (1991).
  144. S.Y. Kim, Yong Kim, M.S.Kim, K.S.Eom, and S-K. Min, "Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry ", J. Korean Phys. Soc. 24, 359 (1991).
  145. Hoon Young Cho, Eun Kyu Kim, Yong Kim, Suk-Ki Min, Ju Hoon Yoon, and Sung Ho Choh, "Deep levels in GaAs grown on Si during rapid thermal annealing ", Appl. Phys. Lett. 56, 761 (1990).
  146. Eun Kyu Kim, Hoon Young Cho, Yong Kim, Moo-Sung Kim, Hyeon-Soo Kim, Suk-Ki Min, Ju Hoon Yoon, and Sung Ho Choh, " Deep electron traps in GaAs layers grown on (100) Si substrates by metalorganic chemical vapor deposition", J. Appl. Phys. 67, 2454 (1990).
  147. Yong Kim, Moo-Sung Kim, Hyeon-Soo Kim, Suk-Ki Min, Hyun Woo Lee, Jae Kwan Kim, and Choochon Lee, "Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si", J. Appl. Phys. 67, 3358 (1990).
  148. Yong Kim, Moo-Sung Kim, Suk-Ki Min, Choochon Lee, and Kyung-Hwa Yoo, "Selenium and silicon delta-doping properties of GaAs by atmospheric pressure metalorganic chemical vapor deposition", J. Appl. Phys. 68, 247 (1990).
  149. Yong Kim, Moo-Sung Kim, and Suk-Ki Min, "Anomalous conduction band density of state in AlxGa1-xAs alloys", Solid State Commun. 68, 295 (1988).
  150. Hyeon-Soo Kim, Yong Kim, Moo-Sung Kim, and Suk-Ki Min,  "Heteroepitaxy of GaAs on Silicon substrates by MOCVD", J. Korean Phys. Soc. 21, 288 (1988).
  151. Hyeon-Soo Kim, Yong Kim, Moo-Sung Kim, and Suk-Ki Min, " Structural properties of GaAs grown on (100) Si substrate by MOCVD", J. Cryst. Growth 92, 507 (1988).

 

B.  Referred scientific publications in Korean

26 domestic publications

9. Patents (17 patents)

1) Suk-Ki Min, Yong Kim, Moo-Sung Kim, " Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition",
  - US Patent No. 5, 281, 551  
  - Japanese Patent No. 1986262 กก
  - Korean Patent No. 100-085920

2) Suk-Ki Min, Yong Kim, Moo-Sung Kim, Seong-Il Kim, "Heater for chemical vapor deposition equipment",
   - US Patent No. 5, 648, 006
   - Korean Patent No. 100-121333

3) Suk-Ki Min, Yong Kim, Moo-Sung Kim, Min-Suk Lee, " Quantum wire fabrication method using GaAs/AlGaAs substrate"
   - Korean Patent No. 100-130610

4) Suk-Ki Min, Yong Kim, Moo Sung Kim, " Growth control method of side wall epitaxial layer of semiconductor mesa and V-grooved structures"
   - Japanese Patent No. 2756949
   - Korean Patent No. 100-162865

5) Suk-Ki Min, Yong Kim, Moo Sung Kim, " Epitaxial growth rate varying method for side surface of semiconductor pattern"
   -US. Patent No. 5,888,294

6) Seong Il Kim and Yong Kim, " Fabrication method of optical and electrical blocking structure of optoelectronic devices using lattice mismatch"
   -Korean Patent No. 100-239677

7) Seong Il Kim and Yong Kim, " Fabrication method of half dome structure for highly efficient opto-electronic devices"
   -Korean Patent No. 100-219835

8) Seong Il Kim and Yong Kim, " Fabrication method of current blocking structure for optoelectronic devices using oxidized aluminum gallium arsenide",
  -Korean Patent No. 100-234005

9) Seong Il Kim and Yong Kim, " Fabrication method of high density quantum dot array by selective growth"
  - Korean Patent No. 100-219837

10) Seong Il Kim and Yong Kim, " Fabrication method of current blocking structure for optoelectronic devices"
  -Korean Patent No. 100-242789

11) Seong Il Kim and Yong Kim, " Fabrication method of high density quantum dot array
  - Korean Patent No. 100-219836

12) Seong Il Kim and Yong Kim, " Fabrication method of quantum wire"
  - Korean Patent No. 100-250953

13) Seong Il Kim and Yong Kim, " Fabrication method of quantum wire using patterned substrate"
- Korean Patent No. 100-279054

10. Books
 
Below papers are included in SPIE milestone reprint series " Selected papers on quantum well intermixing" (edited by E. H. Li);

1) Yong Kim, Shu Yuan, R. Leon, C. Jagadish, M. Gal, M. B. Johnston, M. R. Phillips, M. A. Stevens Kalceff, J. Zou, and D. J. H. Cockayne, " Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate", J. Appl. Phys. 80, 5014 (1996). 

2) R. Leon, Yong Kim, C. Jagadish, M. Gal, J. Zou and D. Cockayne, "Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots", Appl. Phys. Lett.  69, 1888 (1996).

3) Shu Yuan, Yong Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, R. M. Cohen, "Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing", Appl. Phys. Lett. 70. 1269 (1997).

4) W. J. Choi, S. Lee, Y. Kim, D. Woo, S. K. Kim, S. H. Kim, J. I. Lee, K, N. Kang, J. H. Chu, S. K. Yu, J. C. Seo, D. Kim, and K. Cho, " Carrier life times in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers", Appl. Phys. Lett. 67, 3438 (1995).

11. Research Interests

  • Growth and characterization of III-V, IV-IV, II-VI nanowires by vapor-liquid-solid mechanism
  • Epitaxial growth of ternary, quarternary III-N, III-As, III-P by Metal Organic Chemical Vapor Deposition
  • Growth of quantum well, quantum wire, self-assembled quantum dot by Metal Organic Chemical Vapor Deposition
  • Characterizations of semiconductor layers using Photoluminescence, Deep Level Transient Spectroscopy, Capacitance-Voltage, Current-Voltage, X-ray diffraction, etc.
  • Device fabrication of quantum wire, quantum dot laser diodes and other optical devices
  • Si/Ge nanocrystal formation by using Rapid Thermal Chemical Vapor Deposition
  • Si/Ge nanocrystal formation by using Ion beam sputtering
  • Fabrication of single electron devices by using nanocrystals and self-assembled quantum dots
  • Intermixing of quantum well, wire and dot by rapid thermal processing
  • Wafer fusion technology and its application to novel devices

 

Back