Curriculum Vitae

1. Name: Yong Kim

2. Birth Place/Nationality : Seoul, South Korea/ South Korea
3. Address :
Dept. of Physics, Dong-A University, Hadan-2-dong, 840, Sahagu,
Busan 604-714, South Korea
(E-mail address: yongkim@dau.ac.kr )
(home page: nsl.donga.ac.kr)
(Phone: 82-51-200-7276, Fax: 82-51-200-7232)
4. Educational Background:
1979-1982 Dept. of Physics, Seoul National University, BS
1983-1985 Dept. of Physics, Korea Advanced Institute of Science and Technology, MS
1987-1991 Dept. of Physics, Korea Advanced Institute of Science and Technology, Ph. D
5. Job Career:
1983-1990  Researcher, Semiconductor Materials Research Laboratory, Korea Institute of
Science and Technology
1991-1999  Senior Researcher, Semiconductor Materials Research Laboratory, Korea
Institute of Science and Technology
1995-1996  Australian Research Council International Fellow , Dept. of Electronic Materials, Engineering, Research School of Physical Science and Engineering, Australian National University
1999-2004  Assistant Professor, Dept. of Physics, Dong-A University
2004-2008  Associate Professor, Dept. of Physics, Dong-A University
2008-present Professor, Dept. of Physics, Dong-A University
2005-2006  Academic Staff, Dept. Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University
6. Awards:
1) Young Scientist Award, Korea Physical Society (1991)
2) Best Paper Award, Korea Physical Society (1992)
3) Suk-dang Academic Achievement Award, Dong-A University (2007)

7. Selected publications:

  1.  M. S. Song, S. B. Choi, and Yong Kim, "Wurtzite ZnTe nanotrees and nanowires on fluorine-doped tin oxide glass substrates", Nano Lett. 17, 4365 (2017).
  2.  H.J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, Yong Kim, X. Zhang, Y. Guo, J. Zou, ˇ°Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Processˇ±, Nano Lett. 7, 921 (2007).
  3. Yong Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, M. Paladugu, J. Zou, and A. A. Suvorova, ˇ° Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowiresˇ±, Nano Lett. 6, 599 (2006).

8. Patents (17 patents)

1) Suk-Ki Min, Yong Kim, Moo-Sung Kim, " Method for delta-doping in GaAs epitaxial layer grown on silicon substrate by metalorganic chemical vapor deposition",
  - US Patent No. 5, 281, 551  
  - Japanese Patent No. 1986262 ˇˇ
  - Korean Patent No. 100-085920

2) Suk-Ki Min, Yong Kim, Moo-Sung Kim, Seong-Il Kim, "Heater for chemical vapor deposition equipment",
   - US Patent No. 5, 648, 006
   - Korean Patent No. 100-121333

3) Suk-Ki Min, Yong Kim, Moo-Sung Kim, Min-Suk Lee, " Quantum wire fabrication method using GaAs/AlGaAs substrate"
   - Korean Patent No. 100-130610

4) Suk-Ki Min, Yong Kim, Moo Sung Kim, " Growth control method of side wall epitaxial layer of semiconductor mesa and V-grooved structures"
   - Japanese Patent No. 2756949
   - Korean Patent No. 100-162865

5) Suk-Ki Min, Yong Kim, Moo Sung Kim, " Epitaxial growth rate varying method for side surface of semiconductor pattern"
   -US. Patent No. 5,888,294

6) Seong Il Kim and Yong Kim, " Fabrication method of optical and electrical blocking structure of optoelectronic devices using lattice mismatch"
   -Korean Patent No. 100-239677

7) Seong Il Kim and Yong Kim, " Fabrication method of half dome structure for highly efficient opto-electronic devices"
   -Korean Patent No. 100-219835

8) Seong Il Kim and Yong Kim, " Fabrication method of current blocking structure for optoelectronic devices using oxidized aluminum gallium arsenide",
  -Korean Patent No. 100-234005

9) Seong Il Kim and Yong Kim, " Fabrication method of high density quantum dot array by selective growth"
  - Korean Patent No. 100-219837

10) Seong Il Kim and Yong Kim, " Fabrication method of current blocking structure for optoelectronic devices"
  -Korean Patent No. 100-242789

11) Seong Il Kim and Yong Kim, " Fabrication method of high density quantum dot array
  - Korean Patent No. 100-219836

12) Seong Il Kim and Yong Kim, " Fabrication method of quantum wire"
  - Korean Patent No. 100-250953

13) Seong Il Kim and Yong Kim, " Fabrication method of quantum wire using patterned substrate"
- Korean Patent No. 100-279054

9. Books
 
Below papers are included in SPIE milestone reprint series " Selected papers on quantum well intermixing" (edited by E. H. Li);

1) Yong Kim, Shu Yuan, R. Leon, C. Jagadish, M. Gal, M. B. Johnston, M. R. Phillips, M. A. Stevens Kalceff, J. Zou, and D. J. H. Cockayne, " Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate", J. Appl. Phys. 80, 5014 (1996). 

2) R. Leon, Yong Kim, C. Jagadish, M. Gal, J. Zou and D. Cockayne, "Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots", Appl. Phys. Lett.  69, 1888 (1996).

3) Shu Yuan, Yong Kim, C. Jagadish, P. T. Burke, M. Gal, J. Zou, D. Q. Cai, D. J. H. Cockayne, R. M. Cohen, "Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing", Appl. Phys. Lett. 70. 1269 (1997).

4) W. J. Choi, S. Lee, Y. Kim, D. Woo, S. K. Kim, S. H. Kim, J. I. Lee, K, N. Kang, J. H. Chu, S. K. Yu, J. C. Seo, D. Kim, and K. Cho, " Carrier life times in dielectric cap disordered GaAs/AlGaAs multiple quantum well with SiN capping layers", Appl. Phys. Lett. 67, 3438 (1995).

10. Research Interests

  • Growth and characterization of III-V, IV-IV, II-VI nanowires by vapor-liquid-solid mechanism
  • Epitaxial growth of ternary, quarternary III-N, III-As, III-P by Metal Organic Chemical Vapor Deposition
  • Growth of quantum well, quantum wire, self-assembled quantum dot by Metal Organic Chemical Vapor Deposition
  • Characterizations of semiconductor layers using Photoluminescence, Deep Level Transient Spectroscopy, Capacitance-Voltage, Current-Voltage, X-ray diffraction, etc.
  • Device fabrication of quantum wire, quantum dot laser diodes and other optical devices
  • Si/Ge nanocrystal formation by using Rapid Thermal Chemical Vapor Deposition
  • Si/Ge nanocrystal formation by using Ion beam sputtering
  • Fabrication of single electron devices by using nanocrystals and self-assembled quantum dots
  • Intermixing of quantum well, wire and dot by rapid thermal processing
  • Wafer fusion technology and its application to novel devices

 
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